IBM opts for CVD low-k solution

September 18, 2003 – Although IBM Microelectronics had previously demonstrated “manufacturing success” using an enhanced version of Dow Chemical’s SiLK inter-level low-k dielectric resin, the company has decided to opt for a CVD low-k approach to satisfy the wishes of customers.

IBM is “going with a CVD solution at 90nm as a business decision,” said Marc McClear, global business director, semiconductor fab materials at The Dow Chemical Co. “It was a decision driven by new business needs, attendant to (IBM’s) new customers and new partners.”

As previously reported (see WaferNews, V10n18, May 5, 2003), IBM had demonstrated “manufacturing success” in both 200mm and 300mm fabs for 130nm and 90nm nodes. An IBM development engineer presented data that showed the viability of SiLK D resin at Dow’s SiLKnet Alliance Summit in April.

IBM spokesperson Scott Sykes confirmed the decision had been made to use CVD. “We have done pioneering work with SiLK, we’ve shipped parts made with SiLK, but the economics have dictated that a new technology needs broad support to make it viable,” he said. “It’s not an IBM choice, it’s somewhat of an industry choice.”


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