MoSys validates on 0.13-micron

September 2, 2003 – MoSys Inc., Sunnyvale, CA, a maker of high-density embedded memory technology, says its 1T-SRAM-Q technology has been successfully validated on a 0.13-micron logic process. The memory technology is designed to embed as much as 100MB of memory into 0.13-micron and 90nm process nodes.


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