Exclusive Feature: DEPOSITION

Using variance analysis to set up a BBr3
pre-deposition process

By Hamidreza Simchi, Semiconductor Component Industry, Tehran, Iran

The diffusion process has generally been explained using Fick’s law without considering the effect of process gases. The amounts of pre-deposition gases, however, are critical with respect to uniformity and repeatability. Using experimental data and SPSS software, it is shown that sheet resistance depends on FN2, FO2, and FBBr3 for a BBr3 deposition process.

Several distinct methods of doping are in common use [1]. One of these methods is liquid source doping. In the pre-deposition process for BBr3, N2 is not only the carrier gas, but the bubbling gas. O2 and BBr3 are process gases and the chemical reactions are given by:

4BBr3 + 3O2 –> 2B2O3 +6Br2 (1)

2Br2O3 + 3Si –> 4B + 3SiO2 (2)

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