By Hamidreza Simchi, Semiconductor Component Industry, Tehran, Iran
The diffusion process has generally been explained using Fick’s law without considering the effect of process gases. The amounts of pre-deposition gases, however, are critical with respect to uniformity and repeatability. Using experimental data and SPSS software, it is shown that sheet resistance depends on FN2, FO2, and FBBr3 for a BBr3 deposition process.
Several distinct methods of doping are in common use . One of these methods is liquid source doping. In the pre-deposition process for BBr3, N2 is not only the carrier gas, but the bubbling gas. O2 and BBr3 are process gases and the chemical reactions are given by:
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