SemiSouth, II-VI explore SiC

October 8, 2003 – II-VI Inc., Saxonburg, PA, and SemiSouth Laboratories Inc., Starkville, MS, are joining forces to develop silicon carbide (SiC) epitaxial wafers. The deal combines SemiSouth’s SiC epitaxial material growth technology with II-VI’s SiC substrate production capabilities.

The two companies plan to begin sampling 2-in. SiC wafers with epitaxy structures up to 20-microns thick, for application in transistors and rectifiers used in high-power density electronics, radars, and wireless and satellite communications.


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