SUSS creates low-temp bonding method

October 10, 2003 – SUSS Microtec AG, Munich, Germany, has developed a new method for creating SOI and strained silicon using direct wafer bonding.

The technology uses atmospheric pressure plasma to molecularly modify the wafer surface level, reducing the temperatures required for wafer bonding from 1000 degrees Celsius to 200 degrees Celsius.

The technology was co-developed with MPI Halle and Fraunhofer IST.


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