Cree stakes new GaN claim

December 15, 2003 – Cree Inc., Durham, NC, says it has developed new gallium nitride power transistors with much higher power densities than previously achieved.

The GaN HEMTs produce CW power density of 32 W/mm with 55% power-added efficiency at 4GHz, and 30W/mm with 50% efficiency at 8GH, almost triple the power and five points higher than current transistors. The new design was developed as part of a program with DARPA.


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