FASL boosting Flash capacity

December 10, 2003 – — FASL LLC, Sunnyvale, CA, plans to ramp manufacturing capacity for Spansion Flash memory products in 2004 to meet demand from AMD and Fujitsu for wireless products.

FASL expects capacity for 110nm 128Mbit technology will exceed 80% at its Fab 25 and JV3 facilities, and will account for more than 60% of the company’s total fab output. FASL says that converting Fab 25 from producing logic to Flash memory has boosted output by 30%, while reducing the cost/wafer by 40%.

The company also said that its 256Mbit 1.8V technology is already on first silicon, with samples ready by 2Q04.


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.