Isonics gains wafer patent

December 12, 2003 – Isonics Corp., Golden, CO, has been awarded a US patent for its method of lowering the temperature of semiconductor devices built onto the wafer surface.

The patent, “Semiconductor wafers with integrated heat spreading layer,” involves covering wafers with a layer of high-thermal conductivity, isotopically-pure materials including silicon, germanium, SiGe alloys (including strained silicon), GaAs, AlGaAs, GaN, InP, or any combination thereof.

The technology is aimed at creating wafer structures enabling higher power output for devices such as lasers and LEDs.


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