Infineon, Genus, UAlbany sign $12 million partnership

FEB. 3–ALBANY, N.Y.–Infineon Technologies AG, Genus Inc., and the University of Albany Center of Excellence in Nanoelectronics have signed a letter of intent to enter into a $12 million, three-year partnership to develop next-generation memory devices using atomic layer deposition (ALD) technology.

Under the program, Infineon, Genus, and UAlbany will work jointly on site at the UAlbany Center of Excellence in Nanoelectronics to develop and optimize ALD processes for both metal electrode and high-k dielectric materials for sub-45-nm DRAM capacitors. The ALD development will be based on Genus’ StrataGem-300 300-mm wafer cluster tool.

The UAlbany Center of Excellence in Nanoelectronics is housed in a 425,000-squre-foot complex, which includes a 200-/300-mm fab. By mid-2004, the Center’s assets will exceed $1.0 billion in state-of-the-art equipment and tools, housed within a 60,000-square-foot ISO Class 3 capable 300-mm cleanroom.


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