Aixtron joins IMEC high-k program

March 11, 2004 – Aixtron AG, a German supplier of equipment for semiconductor epitaxy, has entered into a three-year deal with IMEC to jointly develop atomic-vapor deposition materials for high-k and metal gate stacks.

The new deal, part of IMEC’s sub-45nm research platform, will include implementation of high-k dielectrics with polysilicon gate electrodes in planar devices targeting EOT values of 1.0-1.5nm; development of metal oxides with k=25-50 to scale EOTs to 0.5nm; exploration of scaling of CMOS devices with 20nm gate length and EOT=0.5nm; and deposition of advanced high-k and metal gate stacks on germanium substrates.

As part of the agreement, Aixtron will install a CMOS cluster platform tool tailored for sub-70nm technology in IMEC’s 300mm cleanroom.


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