Samsung rolls out 0.13-micron flash

March 31, 2004 – Samsung has unveiled new embedded flash technology based on 0.13-micron CMOS, for system-on-a-chip and ASIC designs. The LF13 process allows higher levels of integration to embed flash memories on the same die as logic, SRAM, analog and RF, and incorporates Samsung’s logic process and Silicon Storage Technology Inc.’s split-gate SuperFlash cell. Mass production is scheduled for 3Q04.


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