Applied takes wraps off sub-65nm CVD system

June 8, 2004 – Applied Materials, Santa Clara, CA, has unveiled what it calls a “breakthrough” in chemical-vapor deposition technology: a CVD system that meets requirements for 65nm and below, greater than 7:1 high-aspect ratio gap-fill requirements for shallow-trench and premetal dielectric applications.

ApppThe Producer HARP (high-access ratio process) system also performs “strain engineering,” depositing films that can induce stresses on silicon, which has been shown to improve nMOS drive current for 90nm devices, with similar expectations for 65nm devices and no additional cost requirements or mask layers.


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