Inotera opens doors at 300mm plant

July 1, 2004 – Inotera Memories Inc., the 50-50 venture between Infineon Technologies and Nanya Technology Corp., has inaugurated its $2.2 billion 300mm DRAM production facility in HwaYa Technology Park in Taoyuan, Taiwan, 18 months after the JV was set up.

The first of two stages of equipment and production ramp-up is now complete, with initial production of DRAM chips using 110nm trench technology and an expected capacity of 20,000 wafer starts/month by the end of this year.

Completion of the second stage, slated for the end of 2005, will involve a transition to 90nm technology, and a ramp-up to 50,000 wafer starts/month.

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