Micron stakes claim with NAND flash

July 5, 2004 – Micron Technology Inc., Boise, ID, said it plans to move into NAND flash memory in order to become a top-three supplier of the technology.

The company is developing 90nm NAND flash for mass storage applications, including memory cards and USB devices, with plans to move to 72nm and 58nm, and has a roadmap detailing “multiple configurations and density migrations up to 16Gb,” according to Jan du Preez, VP of networking and communication. The move diversifies Micron’s product stable, which includes various DRAM devices and CMOS image sensors.

Micron said it expects to have a 2Gb NAND component ready to market by the end of this year.


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