Infineon, Winbond do DRAM deal

August 6, 2004 – Infineon Technologies AG and Taiwan’s Winbond Electronics Corp. have expanded their collaboration on DRAM memory manufacturing to include 90nm DRAM trench technology for 300mm production.

Under the deal, Infineon will transfer its 90nm DRAM trench technology and 300mm production processes to Winbond, which will manufacture DRAMs. Also, Winbond will develop and sell proprietary specialty memories, for which Infineon will receive license fees and royalties, and the two will jointly develop specialty memories for mobile applications.

The agreement, which extends a May 2002 partnership involving Infineon’s 110nm DRAM trench technology, increases Infineon’s 200mm and 300mm production capacity, and strengthens its presence in the Asia-Pacific region. The deal’s first products, to be produced at Winbond’s new 300mm plant in Taichung, are expected by the end of 2005.


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