August 18, 2004 – Peregrine Semiconductor Corp., San Diego, CA, has made its 0.25-micron UltraCMOS silicon-on-sapphire process technology available for foundry services. The offering, a follow-up to Peregrine’s 0.5-micron multiproject-run foundry program, will be available on a quarterly basis beginning in 4Q04.
The process is a patented variation of silicon-on-insulator technology using sapphire substrates, promising better low-power and integration capabilities for RFICs compared with GaAs, SiGe BiCMOS, and bulk silicon CMOS.