December 16, 2004 – Toshiba Corp. and NEC Corp. said Wednesday they have jointly developed some key technologies for magnetic random access memory, or MRAM, chips for use in future mobile electronic gadgets, according to Nihon Keizai Shimbun.
The two firms said they have developed a new design that halves the power consumption of such chips, while reducing the frequency of writing errors. MRAM chips use magnetic charges to store data rather than electricity, so they can retain data even when the power supply is turned off. They can also pack more data into a smaller space.
MRAM may replace dynamic random access memory, or DRAM, as the next standard for memory technology as it runs faster. It is also nearly as fast as its more expensive static RAM, or SRAM, counterpart.