January 28, 2005 – Chartered Semiconductor Manufacturing, a dedicated semiconductor foundry, has begun prototyping customer products at its first 300mm facility, Fab 7, at multiple advanced technology nodes.

The 300mm pilot production activities currently run on Chartered’s 0.13-micron process, the 90nm cross-foundry platform jointly developed by Chartered and IBM, and the 90nm silicon-on-insulator (SOI) process tuned to IBM’s high-performance product needs.

The pilot run at 90nm is built on the successful technology transfer of the jointly developed Chartered-IBM process from IBM’s 300mm facility in East Fishkill, NY, to Fab 7 — an achievement that brings the companies closer toward realizing their vision of establishing the industry’s first process-exact, cross-foundry platform that gives customers dual-source manufacturing flexibility. In line with volume production plans in mid-2005, Chartered’s Fab 7 has also begun pilot runs of 90nm SOI products for IBM.