ProMOS selects Varian Semiconductor’s VIISta high current ion implanter

GLOUCESTER, MA — (MARKET WIRE) — 04/21/2005 — Varian Semiconductor Equipment Associates, Inc. announced today that it has won multiple orders for its single wafer VIISta HC high current ion implanter from ProMOS Technologies, Inc. ProMOS ordered the tools to support the expansion of its 300mm memory fab in Taichung, Taiwan.

ProMOS selected Varian Semiconductor due to its market leadership in single wafer high current and the production-proven capability of existing VIISta high current ion implant systems at their Hsinchu fabs. Eddie Chen, vice president, manufacturing group at ProMOS Taichung, said, “Varian Semiconductor’s leading-edge VIISta HC high current ion implanter is essential to our manufacturing goals of optimizing productivity and continuous yield improvements. We are pleased to collaborate with Varian Semiconductor to support the manufacturing of 90nm and beyond process technologies at ProMOS.”

“Memory manufacturers require tools with advanced capabilities that address device scaling challenges over a wide range of implant applications and to sustain high productivity,” said Dr. Yong-Kil Kim, executive vice president and general manager of Asian operations for Varian Semiconductor. “Production results from chipmakers around the world confirm that single wafer VIISta HC ion implanters provide higher yields as a result of better process performance.”

Varian Semiconductor is the market leader in single wafer high current systems. The VIISta HC high current ion implanter is designed to deliver the highest sub 90nm technology productivity and yields due to its unique beam steering capability and exceptional particle performance. The VIISta HC is a member of the VIISta suite of ion implanters — the only proven single wafer platform solution for all production applications with over 300 systems installed worldwide.


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