May 27, 2005 – A research team from Kyoto University and the Japan Science and Technology Agency has developed a way to significantly boost the efficiency of light-emitting diodes (LEDs), according to Nihon Keizai Shimbun.
Reporting in the May 27th edition of the journal Science, the team describes how the light-emitting properties of a thin substrate made of indium gallium arsenide phosphorus (InGaAsP) is enhanced by 300-400% by introducing a network of tiny holes in the crystal structure.
In a typical LED, only around 20% of the light manages to escape from the material and the rest remains trapped within and dissipates. Creating holes with a periodic spacing of 390-480nm in the crystal structure opens up escape routes so more of the injected energy gets emitted as light, increasing the brightness of the LED and reducing its power consumption.
According to the research team, the process could theoretically boost LED efficiency to 100%.