June 6, 2005 – Freescale Semiconductor and the University of Florida have created what they say is the industry’s first double-gate transistor model called FinFET. It is engineered to pack more computing power into less space and reduce power consumption, while using existing semiconductor manufacturing processes.
“Double-gate transistors are becoming a serious candidate for the 45nm technology node,” said Freescale’s CTO Claudine Simson. “The software model developed with the University of Florida moves it one step closer to commercialization. This technology could enable customer applications such as smaller, lighter portable devices with longer battery life, as well as faster computing devices that can handle growing graphic, video, voice and data processing requirements.”
“For the first time, the worlds of silicon technology and circuit design for the new breed of transistors have been successfully bridged,” said Prof. Jerry Fossum at the University of Florida. “We’ve been in collaboration with Freescale on the new technologies for five years and we hope that this breakthrough and expanded collaboration will open doors to new discoveries within them.”