June 7, 2005 — A team of international scientists claimed that they have found a method useful for building next-generation memory chips, according to a Korea Times report. One of the team members, Professor Kim Sang-ouk from Korea Advanced Institute of Science and Technology, said that the team developed a synthetic method to create structures at the nanoscale which can be used to produce semiconductors down to 10 nanometers. Current methods are usually limited to around 50 nanometers.
The professor said the team will cooperate with Samsung in developing memory chips based on circuits thinner than 50 nanometers. He has also applied for local and international patents for the work.
Source: INSEAD InnovAsia