Slurry enables low-k copper device manufacturing

July 21, 2005 – Rohm and Haas Electronic Materials, CMP Technologies, has introduced a new copper barrier slurry designed specifically to help deal with chemical mechanical planarization (CMP) in low-k integration schemes at the 90nm and 65nm technology nodes.

The LK393c4 barrier slurry has a 1:1 selectivity of copper to low-k dielectric and is non-selective alkaline. The slurry enables users, during the copper barrier process, to maintain the copper topography results they achieved after copper clear. Suitable for use with both soft pads and new-generation pad platforms designed for copper barrier applications, the LK393c4 slurry is currently being ramped into high-volume manufacturing for 90nm low-k devices and being qualified for 65nm processes with logic device manufacturers and R&D and process development lines.

Currently available for sampling, CMP Technologies expects the LK393c4 will be commercially available in 3Q05.


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