July 26, 2005 — Veeco Instruments Inc. and Picogiga International, a division of the Soitec Group, announced they have entered into a joint development program designed to advance gallium nitride (GaN)-on-silicon technology.

The effort is intended to speed the volume production of GaN-on-silicon substrates for commercialization in wireless applications by combining Picogiga’s expertise in engineered substrates and compound semiconductors with Veeco’s expertise in molecular beam epitaxy.

Under the agreement, the two companies will work to create an industrial molecular beam epitaxy reactor optimized for use on Picogiga’s GaN-on-silicon process. Initial work will take place in Veeco’s process integration center in Saint Paul, Minn. Upon completion, the system is slated to be installed at Picogiga’s production facility in Les Ulis, France.