August 23, 2005 – Technologies and Devices International Inc. (TDI) has demonstrated indium nitride (InN) epitaxial layers and structures. Novel 2-inch diameter InN-on-sapphire templates and InN/GaN heterostructures will be featured at the 6th International Conference on Nitride Semiconductors in Bremen, Germany, from August 27 through September 3.
Optoelectronic and electronic devices based on Group III Nitride materials (GaN, AlN, InN) are the subject of intense development for various applications including solid state lighting, bio and chemical detection systems, environmental, communication, and military equipment. The GaN-based market is projected to reach $5B in 2007 and exceed $7B in 2009.
Dr. Alexander Syrkin, crystal growth key specialist at TDI, commented, “This result is an important step towards HVPE technology for InN-containing materials and devices including high brightness blue, ultra violet, and white light emitting diodes (LEDs). TDI has already demonstrated GaN-based devices by proprietary patented HVPE technology.”
Syrkin added that the new process allows TDI to deposit InN epitaxial layers or 3D nano-size structures in a controllable manner and thanked the intense collaboration with the Army Research Laboratory and Texas Technical University.