Infineon, Nanya extend DRAM pact

September 29, 2005 – Infineon Technologies AG and Taiwan’s Nanya Technology Corp. have expanded their existing 90-70nm/300mm DRAM technology development agreement to include 60nm process technologies on 300mm wafers, starting September 2005. The work will be conducted at Infineon’s Dresden site, with initial 300mm/60nm products expected to roll out in 2008.

The two companies’ also reportedly are putting together a plan for an initial public offering for their DRAM JV, Inotera Memories, for sometime early next year, to help raise the $500 million needed to build a second 300mm fab. The Financial Times noted that if Infineon and Nanya were to sell all of their 2.51 billion outstanding shares, the IPO could top $3.0 billion IPO to be Taiwan’s biggest IPO in recent years, and would make Inotera Taiwan’s highest-capitalized DRAM manufacturer ahead of Powerchip.


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