October 4, 2005 – Seiko Epson Corp. has made what it claims is the world’s first bendable SRAM (static random access memory) device, using low-temperature polysilicon TFTs (thin film transistors), according to the Nikkei English News.

The manufacturer of information-related equipment, such as printers and electronic devices, plans to develop a commercially viable product, by reducing the prototype’s circuit linewidth of 3 microns to <1 micron. The company expects the bendable SRAM to find uses in IC cards and other products.

The prototype, which measures 10.77 x 8.28mm and is 200 microns thick, has a memory capacity of 16 kilobits. The SRAM is made by lithographing circuits formed on a glass substrate onto a flexible substrate.