December 2005 Exclusive Feature: COMPOUND SEMICONDUCTORS

Using AFM to enhance MOCVD-grown OE devices

Doru I. Florescu, Veeco Instruments Inc.

Metal-organic chemical-vapor deposition (MOCVD) has steadily progressed from small-scale materials research to a mass production technology, enabling such complex optoelectronic (OE) devices as laser diodes and ultrahigh-brightness light-emitting diodes (UHB-LED). These devices support today’s consumer electronics in a wide range of applications, including optical storage for CD/DVD media and backlighting for cell phone keypads and LCD screens.

The emerging solid-state lighting market, where low-power, long-lasting LEDs are beginning to replace standard light bulbs in high-usage applications, requires performance improvements to drive down the cost of devices while maintaining superior material quality. In the case of gallium nitride (GaN)-based LEDs, brightness and uniformity have become key challenges for epi wafer manufacturers while they simultaneously seek to reduce the cost per die.

Read the complete article in PDF format.

If you have any questions or comments, please contact: Julie MacShane, Managing Editor, SST at email: [email protected]


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.