December 22, 2005 – Toshiba Corp. and Sony Corp. have developed promising semiconductor technology that could help realize next-generation large-scale ICs with 45nm line-widths, reported the Nikkei English News. The new technology makes it easier for current to flow in transistor devices by bending silicon crystals.
Channels where current flows are bent, making it easier for charge carriers to move. This advance has led to the development of transistors with a film having the ideal thickness of 30nm. When used in LSI chips with 45nm line-widths, the new technology makes it possible to boost the electric current driving capacity of the device by about 40%.
The two companies have also created technology that can reduce the volume of wiring in next-generation LSI chips. With the 45nm generation of chips expected to be commercialized from 2007, the two companies are looking at ways to best adopt the new technologies.