January 12, 2006 – Fujitsu Ltd. said it will spend 120-130 billion yen (US $1.05-$1.15 billion) to build a new semiconductor plant in Mie Prefecture, expanding its 300mm facilities there.
The new Fab 2 site will supply 90nm and 65nm CMOS logic, and feature a 24,000 sq. ft dual-level cleanroom structure, double the size of the current Fab 1 plant. Construction will begin in early fiscal 2006 with operations beginning by April 2007. Volume production of 10,000 wafers/month is slated for July 2007, with potential ramp to a maximum capacity of 25,000 wafers/month depending on demand.
Fujitsu’s existing Fab 1 300mm/90nm plant was opened in April 2005, and is expected to reach production capacity of 15,000 wafers/month this year.