January 23, 2006 – Intel Corp. and Dai Nippon Printing Co. Ltd. have extended a mask development collaboration to cover mask technologies, including optical lithography (ArF excimer laser) and extreme ultraviolet (EUV), for the 32nm node and beyond. The two companies have partnered on mask development since 2000, ranging from 0.18-micron down to the 45nm node.
“Dai Nippon Printing has a rich history of delivering high quality mask products and we have extensive process knowledge in mask making. The extension and expansion of the collaboration between Intel, and Dai Nippon will ensure successful development of the most advanced masks for future generations of chip technology,” stated Koichi Takanami, senior managing director and member of the board, Dai Nippon Printing Co., Ltd.
“The collaborative efforts of Dai Nippon Printing Company and Intel will provide the opportunity to develop mask technology that will be critical as we continue to track Moore’s Law,” said Bill Holt, VP and GM of Intel’s technology and manufacturing group. “We have been successful in the past working with DNP, and this reaffirms the commitment of both companies to develop leading edge mask technology for future generations of semiconductor lithography.”
EUV lithography has been identified by the International Technology Roadmap of Semiconductors as the leading solution for next-generation lithography after the current 193nm generation of optical lithography.