Intel shows off 45nm SRAMs, eyes 2007 production

January 25, 2006 — Intel Corp. said it has produced the first fully functional SRAM (static random access memory) chips using 45nm process technology, and is on track to manufacture chips with this technology in 2007 using 300mm wafers, continuing adherence to the two-year progression under Moore’s Law.

The SRAM, with more than one billion transistors, was produced to demonstrate performance, yield, and reliability for other Intel processors and logic chips using the 45nm process, as a first step toward high-volume manufacturing.

The 45nm process will facilitate production of chips with more than 5x less leakage, improving battery life for mobile devices and widen opportunities for development of smaller, more powerful platforms.

Initial 45nm development efforts are underway at the company’s D1D facility in Oregon. Further 45nm work will be conducted at two fabs now under construction: Fab 32 in Arizona and Fab 28 in Israel.


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