Samsung ramps 80nm DDR2 memory

March 14, 2006 – Samsung Electronics Co. Ltd. has ramped to volume production of its 512Mb DDR2 DRAM using 80nm process technologies, increasing production efficiency by about 50% over 90nm-based processes.

The company said the move was facilitated by use of a 3D recess channel array transistor, which enhances the refresh rate for data storage, and also reduces cell area coverage and makes room for more chips per wafer.


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.