Samsung ramps 1Gbit/70nm flash output

April 4, 2006 – Samsung Electronics Co. Ltd. has ramped to mass production of 1Gbit OneNAND flash memory devices, using 70nm process technology that achieve 70% greater efficiency than the 90nm process.

Samsung’s OneNAND combines rapid boot-up and data-read functions of NOR flash memory — sustained read speed of 108MB/sec, 60% faster than previous 90nm OneNAND device — with the high-capacity data storage and fast writing capabilities (9.3MB/sec) of NAND flash memory.

The company projects sales of US$1 billion in 2008 and exceeding $1.5 billion by 2010 for its OneNAND line, targeting applications such as handsets, hybrid hard disks, memory cards, and other consumer electronics products.


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