April 25, 2006 — Silicon Genesis Corp. (SiGen) announced that it has developed the process modifications to manufacture direct silicon bonded substrates.

Direct silicon bond (DSB) substrates are fabricated by bonding and electrically attaching a film of single-crystal silicon of differing crystal orientation onto a base substrate. The company says its DSB substrates exhibit bulk-like properties and are compatible with existing electronic design and circuit design tools.

SiGen’s main process developments included modifications to the plasma-activated bond process to allow for a thin interfacial layer. In addition, SiGen focused on eliminating the interfacial layer to produce an electrically robust inter-layer connection.