May 31, 2006 – Embedded memory IP provider Emerging Memory Technologies Inc. (EMT) has signed a deal to license Renesas Technology Corp.’s capacitor-less Twin Transistor RAM (TTRAM) technology, for use with silicon-on-insulator (SOI) CMOS applications. Renesas aims to expand its TTRAM technology, released in September 2005, as the mainstream embedded SOI memory IP technology.

The TTRAM memory cell, which is scalable in 65nm or below process technologies, incorporates two serially connected transistors, eliminating the need for a metal-insulator-metal capacitor implemented in conventional memory cells. The memory also does not require derivative CMOS processes for capacitors or an extra mast set, or complicated on-chip reference voltage sources.

“Embedded memory users will soon be able to benefit from the high-density, cost-effective solutions that were previously only available in bulk CMOS,” stated Kazutami Arimoto, deputy GM of Renesas’ system core technology division. “We are expecting further SOI memory applications growth by combining our TTRAM technology and EMT’s excellent memory compilation technology.”