X-Fab unveils 0.6-micron SOI offering

May 30, 2006 – X-Fab Semiconductor Foundries has ported its 0.6-micron CMOS technology with trench isolation to new silicon-on-insulator (SOI) substrates, offering up to 40% smaller die size and cost-competitiveness with CMOS technology.

The process offers reduced parasitics resulting in less substrate noise and crosstalk, with unrestricted high- and low-side operation for all devices up to 60 V. It is compatible with X-Fab’s XC06 modular mixed-signal technology, and the 5V CMOS core is compatible in design rules and transistor performance with state-of-the-art 0.6 micrometer CMOS processes. MOS transistors are available with breakdown voltages up to 110V.

The technology targets power management, automotive, optical, industrial, and other applications with need for smaller die size, less-complex circuit design with fewer loops, higher speed, and lower power consumption.

“The XT06 SOI benefits create unprecedented mixed-signal circuit design possibilities for power management, smart motor control, and ClassD audio amplifier applications where bulk CMOS technologies are insufficient,” stated Jens Kosch, chief technical officer at X-Fab.


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.