June 30, 2006 – Nanosys Inc., Palo Alto, CA, says it has expanded collaboration with both Intel Corp. and Micron Technology Inc. on development of nanostructures for high-density NAND flash memory, targeting consumer electronics and portable storage applications.

The company already was working with Intel to incorporate its technology into Intel’s roadmap for nonvolatile memory, noted Ed So, VP and director of Intel’s California Technology and Manufacturing, in a statement. Last year Intel and Micron formed a JV, IM Flash Technologies, to manufacture NAND flash. “Nanosys’ technology offers a very practical and promising approach towards addressing the continued scaling needs of the fast-growing non-volatile memory market,” stated Frankie Roohparvar, VP of NAND development at Micron.

Nanosys claims its nanotechnology-enabled memory technology, compatible with current manufacturing processes and equipment, allows for higher storage densities, lower cost-per-bit, and improved reliability. The company’s technology platform incorporates high-performance inorganic nanostructures, covered by roughly 450 patent and patent applications. Its product development programs include nonvolatile memory for electronic devices, as well as work with Sharp on nanostructures for displays and fuel cells for portable electronics, and with In-Q-Tel for nanotechnology-enabled phased array antennas.

Founded in 2001, Nanosys raised $40 million in a private equity financing in November 2005, helped by In-Q-Tel and Intel Capital, after withdrawing a planned $100 million IPO in August 2004.