NEC, MoSys tout Nintendo gaming memory wins

June 19, 2006 – NEC Electronics and Mosys Inc., are touting a win for Nintendo’s new Wii video game console, which uses embedded memory technologies from the two firms.

The unit incorporates NEC’s 90nm CMOS-compatible embedded DRAM technology in its graphics component, made on NEC’s 300mm lines at its Yamagata facility. The technology incorporates an integrated metal-insulator-metal 2 (MIM2) stacked DRAM capacitor on the company’s standard CMOS process. The technology, first introduced last year, uses a MIM structure for electrodes in the DRAM cell to achieve lower resistance values and higher data processing speeds, cobalt-silicide DRAM cell transistors to increase driving performance, and zirconium-oxide in the capacitance layer to increase capacitance of the unit area.

NEC’s embedded technology also incorporates MoSys’s 1T-SRAM technology, used for the main embedded memory on the graphics chip and in an additional external memory chip.


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.