Samsung unveils 60nm-based 2GB flash memory

June 27, 2006 – Samsung Electronics Co. Ltd. says it has successfully developed a 2GB version of its OneNAND flash memory device using 60nm process technologies, increasing write speeds by more than 80% to 17MB/sec compared with the company’s 1GB version.

Samsung claims its OneNAND device offers about 4x faster read speeds than NAND flash, with now faster write speeds in the 60nm version. The chips can be interleaved to attain an even higher capacity, while allowing each chip to independently interact with the system, according to Samsung — the more chips that are interconnected, the more data that can be processed.

The company is exploring use of its OneNAND as a buffer memory inside a hybrid hard disk. Other potential applications include multimedia phones to digital cameras, removable memory cards, PCs, and digital TVs.


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