Intel, Micron push to 50nm NAND

July 26, 2006 – Intel Corp. and Micron Technology Inc., through their joint venture IM Flash, say they have started sampling 4Gbit NAND flash memory devices using 50nm process technologies, and plan to ramp to mass production across a range of memory densities within the next year.

“Our entry into the NAND flash business has been an incredibly fast ramp,” stated Brian Harrison, VP and GM for Intel’s flash memory group, noting that the companies started shipping products to customers in 1Q06.

Micron, which first started producing NAND using 90nm processes in 2004, will supply the venture NAND flash from its fabrication facilities in Boise, ID, as well as its 300mm facility in Manassas, VA, which is scheduled to come online later this year. Micron’s Lehi, Utah facility, dedicated to and headquarters for the IM Flash venture, is expected to come online in early 2007.


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