Samsung tips 60nm, 8Gbit NAND flash

July 19, 2006 – Samsung Electronics Co. Ltd. said it has ramped to volume production of its 8Gbit NAND flash memory based on multilevel cell (MLC) architecture and 60nm process technologies, two years after announcing development of the technology.

By 3Q06 Samsung plans to release an 8GB memory product by stacking two 4GB packages, each with a vertical stack of four 8Gbit dies, and total storage capacity amounting to 2000 MP3 files, or 225 min of DVD-quality video. The 60nm-based 8Gbit NAND flash also will be used in Samsung’s high-density MLC NAND, called “moviNAND,” to produce a 2GB-level NAND device combining NAND flash memory and a NAND controller, to be embedded in mobile handsets.

Last month Samsung said it has developed a 2GB version of its OneNAND flash memory device using 60nm process technology, which it says offers a 25% improvement in manufacturing productivity vs. the previous 70nm design process. In March 2005 the company unveiled its 80nm production process technology for DDR2 DRAM.


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