Taiwan, SST extend embedded flash license to 90nm

August 21, 2006 – Taiwan Semiconductor Manufacturing Co. (TSMC) has signed a deal to license Silicon Storage Technology Inc.’s (SST) 90nm SuperFlash embedded flash technology, as part of its embedded flash portfolio. Samples will be available sometime next year. The technology uses a split gate, source-side injection, poly-erase memory cell capable of true logic VDD read operation.

TSMC and SST signed a deal in Dec. 2005 for SuperFlash using 0.13-micron processes. SST has signed similar deals in recent months with Samsung (0.13-micron), Freescale (0.18-micron), and China’s Grace Semiconductor (0.15, 0.18, and 0.25-micron logic processes).


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