Architecture Enables 40-nm NAND Flash

(September 11, 2006) SEOUL, South Korea &#151 Samsung Electronics Co., Ltd., developed a 40-nm memory device that eliminates the floating gate architecture common to NAND devices. The seventh-generation, 32-Gb memory uses a charge trap flash (CTF) architecture, which places data into a temporary holding chamber in the non-conductive silicon nitride (SiN) layer.

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