Epion announces development program with semi manufacturer

Sept. 19, 2006 — Gas Cluster Ion Beam (GCIB) developer Epion Corp. announced that it has entered into a formal joint development program with one of the world’s leading semiconductor system solutions providers for the mobile, automotive and PC/AV markets and world’s number one supplier of microcontrollers. The development program will utilize Epion’s GCIB technology to develop advanced processes for CMOS logic structures for 45nm and smaller devices.

Epion’s nFusion doping system has been installed in the customer’s Japanese plant, which will allow the device manufacturer to evaluate the technical and production capabilities of the nFusion System, providing feedback to Epion.

GCIB is a room-temperature processing technique with the unique ability to modify the top few layers of atoms on the surface of a wafer. This results in an ability to perform nano-scale surface chemistry to solve leading-edge wafer-doping and deposition problems.


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