Fujitsu licenses MoSys’ SRAM for 65nm process

September 20, 2006 – Fujitsu Ltd. has licensed MoSys Inc.’s 1T-SRAM technology for its 65nm manufacturing process, extending a partnership that had covered Fujitsu’s 0.13-micron and 90nm processes.

Implementing MoSys’ 1T-SRAM memory technology and 1T-Q bit cell into Fujitsu’s 65nm process lets the chipmaker offer complex SoCs with a fraction of the die area devoted to embedded memory compared to other competing embedded memory technologies. The cost savings derived from the smaller embedded memory die area can be allocated to other various uses, such as increasing functionality at the same cost, or significantly reducing unit costs while maintaining the same functionality, the companies said.

“We feel this is one of the best embedded memory solutions on 65nm technology,” stated Kimiaki Satoh, GM of the FCRAM division in Fujitsu’s Electronic Devices Group.


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