X-Fab adds 0.35-, 0.18-micron RF-CMOS processes

October 10, 2006 – X-Fab Silicon Foundries is rolling out a new two-part program offering 0.35-micron and 0.18-micron RF-CMOS processes, for communications end-markets.

The 0.35-micron RF process provides building blocks for ISM band and ZigBee applications. A 0.18-micron RF process, due in 1H07 utilizing technology from recently acquired 1st Silicon (Malaysia) with X-Fab characterization and PDK on top, will incorporate modular options including nonvolatile memory and high-voltage functionality.

“This new program will support the roadmap of companies specialized in RF-designs, and enable developments for communication ICs using X-Fab’s PDKs,” stated Thomas Hartung, VP of marketing and sales at X-Fab. “The new approach using X-Fab’s existing 0.35- and 0.18-micron process platforms allows our customers to reuse their current design IP and maintain their current design environment, resulting in significant cost-savings.”


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