X-FAB rolls out RF-CMOS program for deep sub-micron communications technologies

Oct. 13, 2006 — X-FAB Silicon Foundries, an Erfurt, Germany, analog/mixed-signal semiconductor foundry, announced it has expanded its technology expertise in the communications arena with a new RF-CMOS program. The company says the additions to the current baseline processes will significantly reduce time to market for RF products.

The two-part program includes the newly released XH035 RF-CMOS process that provides cost-effective, easy access to building blocks for ISM Band and ZigBee applications; and a 0.18 micron RF-CMOS process, to be made available during the first half of 2007 with various modular options including non-volatile memory solutions and high-voltage functionality.

“X-FAB is pleased to extend its technology offering into this new area,” said Thomas Hartung, vice president of marketing and sales at X-FAB, in a prepared statement. “Our customers can benefit from easy access to those technologies, reliable models, and reduced time to market. This new program will support the roadmap of companies specialized in RF-designs, and enable developments for communication ICs using X-FAB’s PDKs that are setting industry standards. The new approach using X-FAB’s existing 0.35 and 0.18 micron process platforms allows our customers to reuse their current design IP and maintain their current design environment, resulting in significant cost-savings.”

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