Intel, Micron adding Singapore fab to NAND JV work

November 6, 2006 – Intel Corp. and Micron Technology Inc., through their IM Flash Technologies JV, plan to build a new “multibillion-dollar” fab in Singapore to add a fourth manufacturing outlet for NAND flash memory. The 300mm/50nm facility is projected to come online in 2H08.

“Micron has a long history of conducting business in Singapore with our manufacturing facility there, and this decision with Intel is a natural extension of our positive experience in Singapore,” said Steve Appleton, Micron chairman, CEO, and president, in a statement.

IM Flash already has brought online a 300mm facility in Manassas, VA, with other 300mm operations in Lehi, UT slated to be in production by early next year. The NAND flash venture also utilizes existing capacity at Micron’s facility in Boise, ID.

Micron and Intel introduced 50nm-based NAND flash samples in July, and claim to be now sampling 4Gbit devices, with plans to produce a range of products — including multilevel cell NAND — starting in 2007.

Brian Harrison, VP and GM of Intel’s flash memory group, said the company is “quite pleased” with the progress of the IM Flash partnership, and expects to continue the JV’s ramp one 300mm fab per year “to become one of the top manufacturers of NAND flash memory.”


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