Military Supplier Places GaN Order

(January 25, 2007) GREENSBORO, NC &#151 RF Micro Devices, Inc., received its first order for gallium nitride (GaN) power amplifier ICs produced with proprietary GaN high electron mobility transistor (HEMT) process technology. The tier-one military customer ordered RF3825 power IC broadband amplifiers, 15-W devices used in software-defined military-communications radios.


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